Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture
Identifieur interne : 000750 ( Main/Repository ); précédent : 000749; suivant : 000751Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture
Auteurs : RBID : Pascal:13-0310051Descripteurs français
- Pascal (Inist)
- Evaluation performance, Addition étain, Hétérojonction, Photodétecteur, Etude comparative, Norme, Couche ITO, Trou interconnexion, Rendement quantique, Fonction réponse, Réponse fréquence, Tension polarisation, Fréquence coupure, Mesure électrique, Spectrométrie, Impédance électrique, Photodiode, Oxyde d'indium, Hétérostructure, Thiophène dérivé polymère, Acide butyrique, Ester, Composé du fullerène, Styrènesulfonate polymère, Mélange polymère, Fluorure de lithium, Matériau dopé, Interconnexion, Circuit intégré, 8560G, 8105T, 8560D, ITO, LiF.
- Wicri :
- concept : Norme, Spectrométrie.
English descriptors
- KwdEn :
- Bias voltage, Butyric acid, Comparative study, Cut off frequency, Doped materials, Electrical impedance, Electrical measurement, Ester, Frequency response, Fullerene compounds, Heterojunction, Heterostructures, ITO layers, Indium oxide, Integrated circuit, Interconnection, Lithium fluoride, Performance evaluation, Photodetector, Photodiode, Polymer blends, Quantum yield, Response function, Spectrometry, Standards, Styrenesulfonate polymer, Thiophene derivative polymer, Tin addition, Via hole.
Abstract
We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/ P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/ P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum -3 dB cut-off frequency of 780 kHz and 700 kHz at -3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture</title><author><name sortKey="Arredondo, B" uniqKey="Arredondo B">B. Arredondo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Dpt. Tecnología Electrónica, Universidad Rey Juan Carlos, C/Tulipán s/n</s1><s2>28933 Mósroles, Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="De Dios, C" uniqKey="De Dios C">C. De Dios</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpt. Tecnología Electrónica, Universidad Carlos III de Madrid, Avda. de la Universidad 30</s1><s2>28911 Leganés, Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Vergaz, R" uniqKey="Vergaz R">R. Vergaz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpt. Tecnología Electrónica, Universidad Carlos III de Madrid, Avda. de la Universidad 30</s1><s2>28911 Leganés, Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Criado, A R" uniqKey="Criado A">A. R. Criado</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpt. Tecnología Electrónica, Universidad Carlos III de Madrid, Avda. de la Universidad 30</s1><s2>28911 Leganés, Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Romero, B" uniqKey="Romero B">B. Romero</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Dpt. Tecnología Electrónica, Universidad Rey Juan Carlos, C/Tulipán s/n</s1><s2>28933 Mósroles, Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Zimmermann, B" uniqKey="Zimmermann B">B. Zimmermann</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="W Rfel, U" uniqKey="W Rfel U">U. W Rfel</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Freiburg Materials Research Center FMF, Stefan-Meier-Str. 21</s1><s2>79104 Freiburg</s2><s3>DEU</s3><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0310051</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0310051 INIST</idno><idno type="RBID">Pascal:13-0310051</idno><idno type="wicri:Area/Main/Corpus">000703</idno><idno type="wicri:Area/Main/Repository">000750</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bias voltage</term><term>Butyric acid</term><term>Comparative study</term><term>Cut off frequency</term><term>Doped materials</term><term>Electrical impedance</term><term>Electrical measurement</term><term>Ester</term><term>Frequency response</term><term>Fullerene compounds</term><term>Heterojunction</term><term>Heterostructures</term><term>ITO layers</term><term>Indium oxide</term><term>Integrated circuit</term><term>Interconnection</term><term>Lithium fluoride</term><term>Performance evaluation</term><term>Photodetector</term><term>Photodiode</term><term>Polymer blends</term><term>Quantum yield</term><term>Response function</term><term>Spectrometry</term><term>Standards</term><term>Styrenesulfonate polymer</term><term>Thiophene derivative polymer</term><term>Tin addition</term><term>Via hole</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Addition étain</term><term>Hétérojonction</term><term>Photodétecteur</term><term>Etude comparative</term><term>Norme</term><term>Couche ITO</term><term>Trou interconnexion</term><term>Rendement quantique</term><term>Fonction réponse</term><term>Réponse fréquence</term><term>Tension polarisation</term><term>Fréquence coupure</term><term>Mesure électrique</term><term>Spectrométrie</term><term>Impédance électrique</term><term>Photodiode</term><term>Oxyde d'indium</term><term>Hétérostructure</term><term>Thiophène dérivé polymère</term><term>Acide butyrique</term><term>Ester</term><term>Composé du fullerène</term><term>Styrènesulfonate polymère</term><term>Mélange polymère</term><term>Fluorure de lithium</term><term>Matériau dopé</term><term>Interconnexion</term><term>Circuit intégré</term><term>8560G</term><term>8105T</term><term>8560D</term><term>ITO</term><term>LiF</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Norme</term><term>Spectrométrie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/ P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/ P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum -3 dB cut-off frequency of 780 kHz and 700 kHz at -3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture</s1></fA08><fA11 i1="01" i2="1"><s1>ARREDONDO (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>DE DIOS (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>VERGAZ (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>CRIADO (A. R.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROMERO (B.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZIMMERMANN (B.)</s1></fA11><fA11 i1="07" i2="1"><s1>WÜRFEL (U.)</s1></fA11><fA14 i1="01"><s1>Dpt. Tecnología Electrónica, Universidad Rey Juan Carlos, C/Tulipán s/n</s1><s2>28933 Mósroles, Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Dpt. Tecnología Electrónica, Universidad Carlos III de Madrid, Avda. de la Universidad 30</s1><s2>28911 Leganés, Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Freiburg Materials Research Center FMF, Stefan-Meier-Str. 21</s1><s2>79104 Freiburg</s2><s3>DEU</s3><sZ>7 aut.</sZ></fA14><fA20><s1>2484-2490</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000505855050150</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>38 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0310051</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/ P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/ P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum -3 dB cut-off frequency of 780 kHz and 700 kHz at -3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05T</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F06A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Addition étain</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Tin addition</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Adición estaño</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Heterojunction</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" 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i1="18" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>23</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Heterostructures</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Ester</s0><s5>26</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Ester</s0><s5>26</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Ester</s0><s5>26</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>27</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>27</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Styrènesulfonate polymère</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Styrenesulfonate polymer</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Estireno sulfonato polímero</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Mélange polymère</s0><s5>29</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Polymer blends</s0><s5>29</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Fluorure de lithium</s0><s5>30</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Lithium fluoride</s0><s5>30</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Litio fluoruro</s0><s5>30</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Interconnexion</s0><s5>47</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Interconnection</s0><s5>47</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Interconexión</s0><s5>47</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Circuit intégré</s0><s5>48</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Integrated circuit</s0><s5>48</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Circuito integrado</s0><s5>48</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>8560G</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>8560D</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>LiF</s0><s4>INC</s4><s5>83</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>18</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>18</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>18</s5></fC07><fN21><s1>294</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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